Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

Mehdi, H. ; Réveret, F. ; Bougerol, C. ; Robert-Goumet, C. ; Hoggan, P.E. ; Bideux, L. ; Gruzza, B. ; Leymarie, J. ; Monier, G.

Applied surface science, 2019-11, Vol.495, p.143586, Article 143586 [Periódico revisado por pares]

Elsevier B.V

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