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Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Haferlach, Max ; Pacheco, Anibal ; Sakalas, Paulius ; Alexandru, Mihaela ; Hermann, Sascha ; Nardmann, Tobias ; Schroter, Michael ; Claus, Martin

IEEE transactions on nanotechnology, 2016-07, Vol.15 (4), p.619-626 [Periódico revisado por pares]

New York: IEEE

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Título:
Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges
Autor: Haferlach, Max ; Pacheco, Anibal ; Sakalas, Paulius ; Alexandru, Mihaela ; Hermann, Sascha ; Nardmann, Tobias ; Schroter, Michael ; Claus, Martin
Assuntos: CNTFET ; CNTFETs ; Current measurement ; Electrical characterization ; hysteresis ; Narrowband ; Pulse measurements ; pulsed measurement ; Semiconductor device measurement ; trap model ; trap-effects ; Wideband
É parte de: IEEE transactions on nanotechnology, 2016-07, Vol.15 (4), p.619-626
Descrição: Experimental results gained by various electrical characterization techniques are discussed and compared for a CNTFET technology, which suffers as almost all emerging technologies from traps in the gate oxide. Based on these results, it is highlighted that, contrary to common practice, a fast data acquisition technique is required to ensure a proper electrical device characterization in terms of 1) trap-free device characteristics, 2) reproducible experimental results, and 3) a consistent set of dc and small-signal (ac) characteristics. It is argued that a reasonable technology comparison among emerging technologies must be based on data fulfilling these criteria since trap-affected measurements distort the device behavior which can lead to wrong conclusions about the performance of a device such as the apparent linearity. A trap model capturing the aforementioned issues is briefly introduced. Moreover, the challenges of the electrical characterization of high-impedance devices are explored.
Editor: New York: IEEE
Idioma: Inglês

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Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Haferlach, Max ; Pacheco, Anibal ; Sakalas, Paulius ; Alexandru, Mihaela ; Hermann, Sascha ; Nardmann, Tobias ; Schroter, Michael ; Claus, Martin

New York: IEEE

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