Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets

Kobayashi, Daisuke ; Hirose, Kazuyuki ; Ito, Taichi ; Kakehashi, Yuya ; Kawasaki, Osamu ; Makino, Takahiro ; Ohshima, Takeshi ; Matsuura, Daisuke ; Narita, Takanori ; Kato, Masahiro ; Ishii, Shigeru ; Masukawa, Kazunori

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.523-532 [Periódico revisado por pares]

New York: IEEE

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