Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

Dupuy, Jean-Claude ; Dubois, Christiane ; Prudon, Gilles ; Gautier, Brice ; Kögler, Reinhard ; Akhmadaliev, Shavkat ; Perrat-Mabilon, Angela ; Peaucelle, Christophe

Surface and interface analysis, 2011-01, Vol.43 (1-2), p.137-140 [Periódico revisado por pares]

Chichester, UK: John Wiley & Sons, Ltd

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