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Manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride nanowires for linearly polarized emission

Wang, Hui ; Shi, Jun-jie ; Chen, Zhizhong ; Yu, Tongjun

Journal of physics. D, Applied physics, 2020-11, Vol.53 (46), p.465108 [Periódico revisado por pares]

IOP Publishing

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  • Título:
    Manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride nanowires for linearly polarized emission
  • Autor: Wang, Hui ; Shi, Jun-jie ; Chen, Zhizhong ; Yu, Tongjun
  • Assuntos: first-principles calculations ; III-nitride nanowires ; nanowire diameter ; polarization characteristics ; strain
  • É parte de: Journal of physics. D, Applied physics, 2020-11, Vol.53 (46), p.465108
  • Notas: JPhysD-124716.R2
  • Descrição: Group ΙΙΙ nitrides are crucial semiconductors used in optoelectronic applications such as light-emitting diodes, but their efficiency is still limited due to some material problems including dislocations, strain, composition fluctuations and optical polarization properties. Nitride nanowire (NW) structures, showing advantages in these aspects, are a possible method to address the shortcomings of bulk materials and improve device performances. Here we investigated the manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride NWs by controlling the diameter and strain using first-principles calculations. The inversion of valence bands between heavy/light hole and crystal-field split-off hole is induced with decreasing the diameter of AlN and InN NWs, which causes the switch of polarization characteristics from transverse-magnetic (TM) mode of bulk AlN (transverse-electric (TE) mode of bulk InN) to TE mode of small-diameter AlN NWs (TM mode of small-diameter InN NWs, i.e. linearly polarized emission). Moreover, we also obtained the linearly TM polarized emission in AlN and GaN NWs by applying the compressive strain along the NW axis. The physical origin of the polarization inversion is the variation of the structural parameter μ in NWs. Our results illuminate the polarization properties of wurtzite ΙΙΙ-nitride NWs and pave the way for their future optoelectronic devices.
  • Editor: IOP Publishing
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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