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1570V, 14A 4H-SiC Bipolar Darlington with a High Current Gain of Beta462

Zhao, Jian H ; Zhang, Jianhui ; Alexandrov, Petre ; Burke, Terry

2003

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  • Título:
    1570V, 14A 4H-SiC Bipolar Darlington with a High Current Gain of Beta462
  • Autor: Zhao, Jian H ; Zhang, Jianhui ; Alexandrov, Petre ; Burke, Terry
  • Assuntos: BIPOLAR TRANSISTORS ; CURRENT GAIN ; DARLINGTON TRANSISTORS ; DIRECT CURRENT ; Electrical and Electronic Equipment ; FABRICATION ; GAIN ; HIGH VOLTAGE ; SILICON CARBIDES
  • Notas: DTIC
  • Descrição: This paper reports the design, fabrication and characterization of a 4H-SiC bipolar Darlington with both high DC common emitter current gain and high voltage. The driving and output transistors are designed and fabricated on the same chip with a 12um, 8.5x10(15)cm(-3) doped drift layer and a 1 um 4.1x10(17)cm(-3) doped p base. The Darlington's drive transistor is capable of 1,600V and 5A with a maximum current gain beta(sub 1) over 25 at a collector current density J(sub C1)=250A/cm2 with a specific on-resistance (RSP_ON) of 12.2mOhmscm2. The output transistor can handle over 23A and a blocking voltage higher than 1600V with a peak current gain beta(sub 2)22 at J(sub C2)=261A/cm2 and an R(SP_ON) of 13.4mOhmscm2. The Darlington's DC current gain at room temperature is found to increase with the collector current, up to 462 at I(subC2)=13.9A (232A/cm2), limited by the measurement instrument. The Darlington can block voltages up to 1571V, conduct an I(sub C)=14A at V(sub F)=7.5V and provide a differential R(SP_ON) of 16.7mOhmscm2 at J(sub C2) up to over 240 A/cm2. Temperature-dependent I-V characteristics will be presented for the driving and output transistors. DC common emitter current gains will also be reported for the driving and output transistors as well as the Darlington.
  • Data de criação/publicação: 2003
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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