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2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

Kawahara, T. ; Takemura, R. ; Miura, K. ; Hayakawa, J. ; Ikeda, S. ; Young Min Lee ; Sasaki, R. ; Goto, Y. ; Ito, K. ; Meguro, T. ; Matsukura, F. ; Takahashi, H. ; Matsuoka, H. ; Ohno, H.

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.109-120 [Periódico revisado por pares]

New York, NY: IEEE

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Título:
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read
Autor: Kawahara, T. ; Takemura, R. ; Miura, K. ; Hayakawa, J. ; Ikeda, S. ; Young Min Lee ; Sasaki, R. ; Goto, Y. ; Ito, K. ; Meguro, T. ; Matsukura, F. ; Takahashi, H. ; Matsuoka, H. ; Ohno, H.
Assuntos: Access time ; Applied sciences ; Arrays ; Bi-directional current write parallelizing direction current read ; Bidirectional control ; Chips (memory devices) ; Circuits ; Design. Technologies. Operation analysis. Testing ; Disturbances ; Electronics ; Exact sciences and technology ; Indium tin oxide ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Laboratories ; low-power RAM ; Magnesium oxide ; Nonvolatile memory ; nonvolatile RAM ; Random access memory ; Read-write memory ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; spin-transfer torque ; TMR ; Torque ; Tunneling ; universal memory ; Writing
É parte de: IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.109-120
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 mum logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power nonvolatile RAM, or universal memory. This chip features an array scheme with bit-by-bit bi-directional current writing to achieve proper spin-transfer torque writing of 100 ns, and parallelizing-direction current reading with a low-voltage bit-line for preventing read disturbances that lead to 40 ns access time.
Editor: New York, NY: IEEE
Idioma: Inglês

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2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read

Kawahara, T. ; Takemura, R. ; Miura, K. ; Hayakawa, J. ; Ikeda, S. ; Young Min Lee ; Sasaki, R. ; Goto, Y. ; Ito, K. ; Meguro, T. ; Matsukura, F. ; Takahashi, H. ; Matsuoka, H. ; Ohno, H.

New York, NY: IEEE

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