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Ion implantation into GaN

Kucheyev, S.O ; Williams, J.S ; Pearton, S.J

Materials science & engineering. R, Reports : a review journal, 2001-05, Vol.33 (2), p.51-108 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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Título:
Ion implantation into GaN
Autor: Kucheyev, S.O ; Williams, J.S ; Pearton, S.J
Assuntos: Annealing ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in iii-v and ii-vi semiconductors ; Exact sciences and technology ; GaN ; Implantation disorder ; Ion implantation ; Ion radiation effects ; Materials science ; Physical radiation effects, radiation damage ; Physics ; Radiation treatment (particle and electromagnetic) ; Radiation treatments ; Structure of solids and liquids; crystallography ; Treatment of materials and its effects on microstructure and properties
É parte de: Materials science & engineering. R, Reports : a review journal, 2001-05, Vol.33 (2), p.51-108
Descrição: The current status of ion beam processing of GaN is reviewed. In particular, we discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, (iv) anomalous surface erosion during ion bombardment at elevated temperatures, (v) the effect of implantation disorder on mechanical properties, (vi) current progress on annealing of implantation disorder, (vii) electrical and optical doping, and (viii) electrical isolation. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN-based devices.
Editor: Lausanne: Elsevier B.V
Idioma: Inglês

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Ion implantation into GaN

Kucheyev, S.O ; Williams, J.S ; Pearton, S.J

Lausanne: Elsevier B.V

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