Idioma:

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

Li, Ruoyu ; Hudson, Fay E ; Dzurak, Andrew S ; Hamilton, Alexander R

Nano letters, 2015-11, Vol.15 (11), p.7314-7318 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Título:
Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
Autor: Li, Ruoyu ; Hudson, Fay E ; Dzurak, Andrew S ; Hamilton, Alexander R
Assuntos: Coupling ; Government agencies ; Leakage current ; Magnetic fields ; Nanostructure ; Qunatum dots ; Silicon ; Spin-orbit interactions ; Transport
É parte de: Nano letters, 2015-11, Vol.15 (11), p.7314-7318
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of interdot level spacing and magnetic field. With varied interdot tunnel coupling, we can identify different dominant spin relaxation mechanisms. Application of a strong out-of-plane magnetic field causes an avoided singlet–triplet level crossing, from which the heavy hole g-factor ∼0.93 and the strength of spin–orbit interaction ∼110 μeV can be obtained. The demonstrated strong spin–orbit interaction of heavy holes promises fast local spin manipulation using only electric fields, which is of great interest for quantum information processing.
Editor: United States: American Chemical Society
Idioma: Inglês

Links

Voltar para lista de resultados

Anterior Resultado 19 Avançar Ir para próxima página