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Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Budiman, A.S. ; Shin, H.-A.-S. ; Kim, B.-J. ; Hwang, S.-H. ; Son, H.-Y. ; Suh, M.-S. ; Chung, Q.-H. ; Byun, K.-Y. ; Tamura, N. ; Kunz, M. ; Joo, Y.-C.

Microelectronics and reliability, 2012-03, Vol.52 (3), p.530-533 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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Título:
Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits
Autor: Budiman, A.S. ; Shin, H.-A.-S. ; Kim, B.-J. ; Hwang, S.-H. ; Son, H.-Y. ; Suh, M.-S. ; Chung, Q.-H. ; Byun, K.-Y. ; Tamura, N. ; Kunz, M. ; Joo, Y.-C.
Assuntos: Applied sciences ; Copper ; Cyclic accelerators and storage rings ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Experimental methods and instrumentation for elementary-particle and nuclear physics ; Hydrostatics ; In situ measurement ; Integrated circuits ; Nuclear physics ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Stresses ; Synchrotrons ; X-rays
É parte de: Microelectronics and reliability, 2012-03, Vol.52 (3), p.530-533
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: [Display omitted] Through-silicon via (TSV) has been used for 3-dimentional integrated circuits. Mechanical stresses in Cu and Si around the TSV were measured using synchrotron X-ray microdiffraction. The hydrostatic stress in Cu TSV went from high tensile of 234MPa in the as-fabricated state, to −196MPa (compressive) during thermal annealing (in situ measurement), to 167MPa in the post-annealed state. Due to this stress, the keep-away distance in Si was determined to be about 17μm. Our results suggest that Cu stress may lead to reliability as well as integration issues, while Si stress may lead to device performance concerns.
Editor: Kidlington: Elsevier Ltd
Idioma: Inglês

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Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Budiman, A.S. ; Shin, H.-A.-S. ; Kim, B.-J. ; Hwang, S.-H. ; Son, H.-Y. ; Suh, M.-S. ; Chung, Q.-H. ; Byun, K.-Y. ; Tamura, N. ; Kunz, M. ; Joo, Y.-C.

Kidlington: Elsevier Ltd

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