New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs

Tamaki, Y. ; Tsuji, K. ; Otani, O. ; Nonami, H. ; Tomatsuri, T. ; Yoshida, E. ; Hamamoto, M. ; Nakazato, N.

IEEE transactions on semiconductor manufacturing, 2005-05, Vol.18 (2), p.272-278 [Periódico revisado por pares]

New York, NY: IEEE

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