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Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

SUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, Y

Appl. Phys. Lett.; (United States), 1988-10, Vol.53 (15), p.1378-1383 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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Título:
Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
Autor: SUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, Y
Assuntos: ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; AMPLIFICATION ; ARSENIC COMPOUNDS ; ARSENIDES ; CARRIER DENSITY ; CURRENTS ; DESIGN ; ELECTRIC CURRENTS ; ELECTRONIC STRUCTURE ; ENGINEERING ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; GAIN ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; INDIUM ARSENIDES ; INDIUM COMPOUNDS ; LASERS ; MODULATION ; Optics ; Physics ; PNICTIDES ; SEMICONDUCTOR DEVICES 420300 -- Engineering-- Lasers-- (-1989) ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; THRESHOLD CURRENT
É parte de: Appl. Phys. Lett.; (United States), 1988-10, Vol.53 (15), p.1378-1383
Notas: None
Descrição: Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency fr, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 Å In0.9Ga0.1As/In0.52Al0.48As QW structure compared with that in a 50 Å GaAs/Al0.4Ga0.6As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the fr value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5×1018 cm−3 in the In0.9Ga0.1As/In0.52Al0.48As QW.
Editor: Melville, NY: American Institute of Physics
Idioma: Inglês

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Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

SUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, Y

Melville, NY: American Institute of Physics

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