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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Knight, Sean ; Richter, Steffen ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ; Persson, Per O. Å. ; Paskov, Plamen P. ; Schubert, Mathias ; Darakchieva, Vanya

Journal of applied physics, 2023-11, Vol.134 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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Título:
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Autor: Knight, Sean ; Richter, Steffen ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ; Persson, Per O. Å. ; Paskov, Plamen P. ; Schubert, Mathias ; Darakchieva, Vanya
Assuntos: Aluminum ; Applied physics ; Barrier layers ; Condensed Matter Physics ; Conduction bands ; Current carriers ; Den kondenserade materiens fysik ; Eddy currents ; Electromagnetism ; Electron gas ; Electrons ; Fysik ; Gallium nitrides ; Hall effect ; Heterostructures ; High electron mobility transistors ; Mathematical analysis ; Natural Sciences ; Naturvetenskap ; Permanent magnets ; Physical Sciences ; Room temperature ; Scattering ; Semiconductor devices ; Wave functions
É parte de: Journal of applied physics, 2023-11, Vol.134 (18)
Descrição: Al xGa 1 − xN/GaN high-electron-mobility transistor (HEMT) structures are key components in electronic devices operating at gigahertz or higher frequencies. In order to optimize such HEMT structures, understanding their electronic response at high frequencies and room temperature is required. Here, we present a study of the room temperature free charge carrier properties of the two-dimensional electron gas (2DEG) in HEMT structures with varying Al content in the Al xGa 1 − xN barrier layers between x = 0.07 and x = 0.42. We discuss and compare 2DEG sheet density, mobility, effective mass, sheet resistance, and scattering times, which are determined by theoretical calculations, contactless Hall effect, capacitance-voltage, Eddy current, and cavity-enhanced terahertz optical Hall effect (THz-OHE) measurements using a low-field permanent magnet (0.6 T). From our THz-OHE results, we observe that the measured mobility reduction from x = 0.13 to x = 0.42 is driven by the decrease in 2DEG scattering time, and not the change in effective mass. For x < 0.42, the 2DEG effective mass is found to be larger than for electrons in bulk GaN, which in turn, contributes to a decrease in the principally achievable mobility. From our theoretical calculations, we find that values close to 0.3 m 0 can be explained by the combined effects of conduction band nonparabolicity, polarons, and hybridization of the electron wavefunction through penetration into the barrier layer.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Knight, Sean ; Richter, Steffen ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ; Persson, Per O. Å. ; Paskov, Plamen P. ; Schubert, Mathias ; Darakchieva, Vanya

Melville: American Institute of Physics

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