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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Título:
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Autor: Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo
Assuntos: A3. MOCVD ; B1. a-plane GaN ; B1. Nitrides ; B2. Semi-conducting III–V materials ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Crystal structure ; Epitaxy ; Exact sciences and technology ; Gallium nitrides ; Indium gallium nitrides ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Methods of nanofabrication ; Nanocomposites ; Nanomaterials ; Nanoscale pattern formation ; Nanostructure ; Physics ; Sapphire
É parte de: Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: We report on the use of a novel technique to grow the nonpolar a-plane GaN on r-plane sapphire by metal–organic chemical vapor deposition. A thin InGaN interlayer was deposited on the substrate followed by a low temperature (LT) GaN buffer layer. A stripe-like template was obtained by annealing the LT GaN/InGaN layers at 1100°C for 2min. This special template facilitated the nanoscale epitaxial lateral overgrowth of a-plane GaN. Scanning electron microscopy shows that the surface morphology was rather flat for a 1μm-thick sample. The improvement in crystalline quality was also demonstrated by high-resolution x-ray diffraction, room temperature Raman spectroscopy and photoluminescence measurements. Compared with the traditional epitaxial lateral overgrowth technique, our technique greatly simplified the template preparing process and the crystalline quality of a-plane GaN was improved. ► We used an InGaN interlayer to improve the crystalline quality of a-plane GaN film. ► A very special template was formed to realize the NELO process. ► Improvement of crystalline quality was demonstrated by various experiments.
Editor: Amsterdam: Elsevier B.V
Idioma: Inglês

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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Amsterdam: Elsevier B.V

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